The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Oct. 21, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Jong-Chul Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01); H01L 43/08 (2006.01); H01L 27/24 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/249 (2013.01); H01L 27/2427 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 43/08 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1226 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 43/10 (2013.01);
Abstract

A semiconductor device includes a stacked structure of cell structures, an electrode structure, and a heating electrode. Each cell structure includes a capping layer, a selection layer, a buffer layer, a variable resistance layer, and a upper electrode layer sequentially stacked. The electrode structure is in an opening passing through the stacked structure, is electrically isolated from the buffer layer, the variable resistance layer, and the upper electrode layer, and is electrically connected to the selection layer. The heating electrode is between the variable resistance layer and the upper electrode layer and operates to transfer heat to the variable resistance layer.


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