The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
May. 14, 2019
Massachusetts Institute of Technology, Cambridge, MA (US);
James Gregory, Sudbury, MA (US);
Christopher Leitz, Watertown, MA (US);
Kevin Ryu, Arlington, MA (US);
Donna-Ruth Yost, Acton, MA (US);
Vladimir Bolkhovsky, Framingham, MA (US);
Renee Lambert, Framingham, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A new process that enables void-free direct-bonded MBE-passivated large-format image sensors is disclosed. This process can be used to produce thin large-area image sensors for UV and soft x-ray imaging. Such devices may be valuable in future astronomy missions or in the radiology field. Importantly, by controlling the hydrogen concentration in the silicon oxide layers of the image sensor and the support wafer, voids in the bonding interface can be significantly reduced or eliminated. This process can be applied to any wafer that includes active circuitry and requires a second wafer, such as a support wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile