The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Jun. 29, 2015
Applicant:
Universität Konstanz, Constance, DE;
Inventors:
Sebastian Gloger, Constance, DE;
Barbara Terheiden, Constance, DE;
Daniel Sommer, Constance, DE;
Axel Herguth, Constance, DE;
Josh Engelhardt, Constance, DE;
Assignee:
UNIVERSITÄT KONSTANZ, , DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01); H01L 21/223 (2006.01); H01L 21/02 (2006.01); H01L 31/0376 (2006.01); H01L 21/38 (2006.01); H01L 21/04 (2006.01); H01L 21/22 (2006.01); H01L 21/3115 (2006.01); H01L 21/4757 (2006.01); H01L 21/18 (2006.01); H01L 21/24 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0682 (2013.01); H01L 21/223 (2013.01); H01L 21/2255 (2013.01); H01L 21/2256 (2013.01); H01L 31/1804 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02129 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/02675 (2013.01); H01L 21/046 (2013.01); H01L 21/0455 (2013.01); H01L 21/18 (2013.01); H01L 21/22 (2013.01); H01L 21/2205 (2013.01); H01L 21/24 (2013.01); H01L 21/3115 (2013.01); H01L 21/31155 (2013.01); H01L 21/38 (2013.01); H01L 21/47576 (2013.01); H01L 31/03762 (2013.01); H01L 31/068 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract
What is proposed is a method of producing at least two differently heavily doped subzones () predominantly doped with a first dopant type in a silicon substrate (), in particular for a solar cell. The method comprises: The method uses the observation that a borosilicate glass layer seems to promote an in-diffusion of phosphorus from a gas atmosphere and may substantially facilitate a manufacturing for example of solar cells, in particular back contact solar cells.