The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Jan. 09, 2017
Applicant:

The Research Foundation for the State University of New York, Albany, NY (US);

Inventors:

Amirhossein Goldan, Stony Brook, NY (US);

Wei Zhao, East Setauket, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 31/0272 (2006.01); H01L 31/0376 (2006.01); H01L 31/054 (2014.01); H01L 31/107 (2006.01); H01L 31/08 (2006.01); H01L 31/10 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0272 (2013.01); H01L 31/0376 (2013.01); H01L 31/054 (2014.12); H01L 31/085 (2013.01); H01L 31/10 (2013.01); H01L 31/107 (2013.01); H01L 31/20 (2013.01); Y02E 10/52 (2013.01);
Abstract

Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.


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