The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Apr. 03, 2019
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Jae-Eun Pi, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Jaehyun Moon, Daejeon, KR;
Seongdeok Ahn, Daejeon, KR;
Jongchan Lee, Seoul, KR;
Chul Woong Joo, Sejong-si, KR;
Chi-Sun Hwang, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 29/66742 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01);
Abstract
Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.