The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Oct. 12, 2017
Applicant:
Sogang University Research Foundation, Seoul, KR;
Inventors:
Kwang Soo Kim, Goyang-si, KR;
Dong Woo Bae, Seoul, KR;
Assignee:
SOGANG UNIVERSITY RESEARCH FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 21/82 (2006.01); H01L 21/74 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0626 (2013.01); H01L 21/046 (2013.01); H01L 21/74 (2013.01); H01L 21/8213 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 27/0928 (2013.01); H01L 29/1083 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 21/823892 (2013.01);
Abstract
Disclosed is a transistor including a substrate, first and second type wells in contact with each other on the substrate; and a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.