The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Jun. 08, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kyu-ho Cho, Seoul, KR;
Sang-yeol Kang, Yongin-si, KR;
Sun-min Moon, Yongin-si, KR;
Young-lim Park, Anyang-si, KR;
Jong-bom Seo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 21/022 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02304 (2013.01); H01L 21/02672 (2013.01); H01L 27/10814 (2013.01); H01L 27/10817 (2013.01); H01L 27/10852 (2013.01); H01L 28/65 (2013.01); H01L 29/0649 (2013.01);
Abstract
A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.