The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Dec. 27, 2018
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Romain Delhougne, Boortmeerbeek, BE;

Davide Francesco Crotti, Leuven, BE;

Gouri Sankar Kar, Leuven, BE;

Luca Di Piazza, Wezembeek-Oppem, BE;

Ludovic Goux, Hannut, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 27/11597 (2017.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 27/11597 (2013.01); H01L 27/2409 (2013.01); H01L 27/2427 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1683 (2013.01);
Abstract

In one aspect, a method for manufacturing a three-dimensional (3D) semiconductor device is disclosed. It includes providing a vertical stack of alternating layers of a first layer type and a second layer type, and providing a first trench and a second trench adjacent the vertical stack. The first trench and the second trench can define a fin. The method further can include recessing the first layer type to form recesses extending into the fin, providing a first electrode in individual ones of the recesses, and providing a second electrode in the first trench and the second trench. The method further can include providing, for individual ones of the recesses, a lateral stack including a memory element, a middle electrode, and a selector element. The lateral stack can extend between the first electrode and the second electrode, thereby forming a memory device.


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