The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Mar. 02, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Kunifumi Suzuki, Yokkaichi Mie, JP;

Kazuhiko Yamamoto, Yokkaichi Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1641 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/32 (2013.01); G11C 2213/51 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01);
Abstract

A memory device is described. A first conductive layer extends in a first direction. A second conductive layer extends in the first direction. A third conductive layer extends in a second direction intersecting the first direction. A first oxide region is disposed between the first conductive layer and the third conductive layer and between the second conductive layer and the third conductive layer. A semiconductor region is disposed between the first conductive layer and the first oxide region and between the first conductive layer and the second conductive layer. A second distance between the semiconductor region, which is disposed between the first conductive layer and the second conductive layer, and the third conductive layer, is longer than a first distance between the semiconductor region, which is disposed between the first conductive layer and the first oxide region, and the third conductive layer.


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