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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10825849 B1

PDFFull Text
Date of Patent:
Nov. 03, 2020

Filed:

Feb. 15, 2019

Solid-state image pickup device

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Takayuki Ezaki, Kanagawa, JP;

Teruo Hirayama, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

Michael Best & Friedrich LLP

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 27/148 (2006.01); H01L 29/768 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 29/4236 (2013.01); H01L 31/02 (2013.01);
Abstract

A solid-state image pickup deviceaccording to the present invention includes a semiconductor substrateon which a pixelcomposed of a photodiodeand a transistor is formed. The transistor comprising the pixelis formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiodeis provided within the semiconductor substrateand a part of the pn junction portion of the photodiodeis extended to a lower portion of the transistor formed on the surface of the semiconductor substrate. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

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