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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10825843 B1

PDFFull Text
Date of Patent:
Nov. 03, 2020

Filed:

Oct. 12, 2017

Active matrix substrate and method for producing same

Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Teruyuki Ueda, Sakai, JP;

Hideki Kitagawa, Sakai, JP;

Tohru Daitoh, Sakai, JP;

Hajime Imai, Sakai, JP;

Masahiko Suzuki, Sakai, JP;

Setsuji Nishimiya, Sakai, JP;

Tetsuo Kikuchi, Sakai, JP;

Toshikatsu Itoh, Sakai, JP;

Kengo Hara, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Mark W Tornow

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/136204 (2013.01); G02F 1/136286 (2013.01); H01L 27/0292 (2013.01); H01L 27/0296 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); G02F 1/134363 (2013.01); G02F 2001/136295 (2013.01); H01L 29/7869 (2013.01);
Abstract

Provided is an active matrix substrate (A) including: a gate metal layer () that has a two-layer structure composed of a Cu layer () and a Ti layer (); a first insulating layer () on the gate metal layer (); a source metal layer () that is formed on the first insulating layer () and has a two-layer structure composed of a Cu layer () and a Ti layer (); a second insulating layer () on the source metal layer (); a conductive layer () that is formed on the second insulating layer (), and is in contact with the gate metal layer () within a first opening () formed in the first insulating layer () and is in contact with the source metal layer () within a second opening () formed in the second insulating layer (); and a first transparent conductive layer () that is formed on the conductive layer () and includes any of a pixel electrode, a common electrode and an auxiliary capacitor electrode. The conductive layer () does not include any of the pixel electrode, the common electrode, and the auxiliary capacitor electrode, and does not have a Ti layer being in contact with the Cu layer () of the gate metal layer ().

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