The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Jul. 24, 2018
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Hiroshi Kanno, Matsumoto, JP;

Masaharu Yamaji, Matsumoto, JP;

Hitoshi Sumida, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H02M 1/08 (2006.01); H01L 21/8238 (2006.01); H01L 21/761 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0921 (2013.01); H01L 24/48 (2013.01); H01L 29/0623 (2013.01); H01L 29/0638 (2013.01); H01L 29/1083 (2013.01); H01L 21/761 (2013.01); H01L 21/823892 (2013.01); H01L 29/0692 (2013.01); H01L 29/1087 (2013.01); H02M 1/08 (2013.01);
Abstract

A semiconductor integrated circuit includes: a first well region of a first conductivity type; a second well region of a second conductivity type provided in an upper portion of the first well region; a first current suppression layer of a second conductivity type being provided to be separated from the first well region in a lower portion of a base-body of the second conductivity type directly under the first well region and having an impurity concentration higher than that of the base-body; and a second current suppression layer of the first conductivity type provided under the first current suppression layer so as to be exposed from a bottom surface of the base-body.


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