The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Oct. 26, 2018
Applicant:

Alpha and Omega Semiconductor (Cayman) Ltd., Grand Cayman, KY;

Inventor:

Shekar Mallikarjunaswamy, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0814 (2013.01); H01L 29/66098 (2013.01); H01L 29/861 (2013.01);
Abstract

A transient voltage suppressor (TVS) device uses a punch-through silicon controlled rectifier (SCR) structure for the high-side steering diode and/or the low-side steering diode where the punch-through SCR structure realizes low capacitance at the protected node. In some embodiments, the breakdown voltage of the TVS device is tailored by connecting two or more forward biased diodes in series. The low capacitance TVS device can be configured for unidirectional or bidirectional applications. In some embodiments, the TVS device includes a MOS-triggered silicon controlled rectifier as the high-side steering diode. The breakdown voltage of the TVS device can be adjusted by adjusting the threshold voltage of the MOS transistor.


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