The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Sep. 07, 2018
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Nobuyuki Toda, Kawasaki Kanagawa, JP;
Takeshi Yamamoto, Kawasaki Kanagawa, JP;
Shinji Kawahara, Yokohama Kanagawa, JP;
Kazuaki Yamaura, Yokohama Kanagawa, JP;
Takashi Ishikawa, Tama Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, an insulating film provided on the semiconductor substrate, a first element disposed at least in a lower layer portion of the insulating film, a second element disposed at least in the lower layer portion of the insulating film, and a hydrogen barrier member provided on the semiconductor substrate. The hydrogen barrier member is made from a material transmitting hydrogen less easily than does a material of the insulating film. The hydrogen barrier member and the semiconductor substrate surround the second element. The hydrogen barrier member does not surround the first element.