The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Mar. 11, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Akitsugu Hatazaki, Yokkaichi, JP;

Hiroko Tahara, Yokkaichi, JP;

Naomi Fukumaki, Yokkaichi, JP;

Masayuki Kitamura, Yokkaichi, JP;

Takashi Ohashi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/11551 (2017.01); H01L 27/11521 (2017.01); H01L 21/822 (2006.01); H01L 27/11578 (2017.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76804 (2013.01); H01L 21/76847 (2013.01); H01L 21/76877 (2013.01); H01L 21/8221 (2013.01); H01L 27/11521 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01); H01L 21/31116 (2013.01); H01L 21/7684 (2013.01);
Abstract

A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.


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