The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Aug. 30, 2018
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Smic New Technology Research and Development (Shanghai) Corporation, Shanghai, CN;

Inventor:

Qing Peng Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 27/02 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0217 (2013.01); H01L 21/0276 (2013.01); H01L 21/02164 (2013.01); H01L 21/02205 (2013.01); H01L 21/02236 (2013.01); H01L 21/02271 (2013.01); H01L 21/02318 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 29/6681 (2013.01); H01L 21/02211 (2013.01); H01L 21/76229 (2013.01);
Abstract

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate. The substrate includes an active region and a blank region disposed adjacent to the active region. The method also includes forming a fin material layer on the substrate. Further, the method includes forming a plurality of fins on the active region, and a plurality of dummy fins on the blank region by etching the fin material layer. A spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.


Find Patent Forward Citations

Loading…