The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Apr. 16, 2019
Applicant:

Siemens Healthcare Gmbh, Erlangen, DE;

Inventors:

Michael Hosemann, Erlangen, DE;

Kay Viehweger, Dresden, DE;

Assignee:

SIEMENS HEALTHCARE GMBH, Erlangen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 31/18 (2006.01); H01L 27/08 (2006.01); H01L 31/02 (2006.01); H01L 23/48 (2006.01); H01L 31/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 27/0814 (2013.01); H01L 31/02005 (2013.01); H01L 31/085 (2013.01); H01L 31/1804 (2013.01);
Abstract

A method is for producing an integrated circuit. In an embodiment, a metallic contact structure, for a through silicon via with a contact area, is applied onto a silicon substrate without an insulating intermediate layer. An interconnection structure, with at least one insulating layer and at least one interconnection layer, is applied onto the silicon substrate. The contact structure is or will be contacted with the interconnection layer or at least one of the possibly plurality of interconnection layers, and a diode structure for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate is introduced into the silicon substrate.


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