The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Mar. 19, 2019
Applicants:

Memray Corporation, Seoul, KR;

Yonsei University, University—industry Foundation (Uif), Seoul, KR;

Inventor:

Myoungsoo Jung, Incheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); H01L 27/22 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); G06F 11/10 (2006.01); G06N 20/00 (2019.01); H05K 1/18 (2006.01); H01L 43/08 (2006.01); G11C 11/56 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/0608 (2013.01); G06F 3/0673 (2013.01); G06F 11/106 (2013.01); G06F 13/16 (2013.01); G06N 20/00 (2019.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/56 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H05K 1/181 (2013.01); G11C 11/1673 (2013.01); H05K 2201/10159 (2013.01); H05K 2201/10166 (2013.01); H05K 2201/10522 (2013.01);
Abstract

A magnetoresistive memory module used as a main memory of a computing device is provided. A plurality of memory chips are mounted on a printed circuit board, and a memory controller performs data scrubbing. Each memory chip includes a plurality of magnetoresistive memory cells. Each magnetoresistive memory cell includes a magnetoresistive element and an access transistor that transfers a current to the magnetoresistive element, and has a size of a cell area that is substantially similar to a size of a DRAM cell area.


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