The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Jul. 03, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Takamitsu Kitamura, Osaka, JP;

Hideki Yagi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/43 (2006.01); H01L 31/105 (2006.01); G01J 1/44 (2006.01); G01J 1/42 (2006.01); H01L 31/0232 (2014.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); G01J 1/04 (2006.01); G01J 1/02 (2006.01); G01J 9/02 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G01J 1/44 (2013.01); G01J 1/0209 (2013.01); G01J 1/0407 (2013.01); G01J 1/4228 (2013.01); G02B 6/43 (2013.01); H01L 31/02327 (2013.01); H01L 31/03046 (2013.01); H01L 31/035281 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); H01L 31/1844 (2013.01); G01J 2001/446 (2013.01); G01J 2009/023 (2013.01); G01J 2009/0261 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12178 (2013.01);
Abstract

A method for fabricating a light receiving device includes: preparing a first substrate product which includes a semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode, a second semiconductor laminate for a waveguide, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, the first laminate and the second semiconductor laminate being disposed on the common semiconductor layer; etching the first substrate product with a first mask to form a second substrate product having a photodiode mesa structure produced from the first semiconductor laminate and a preliminary mesa structure produced from the second semiconductor laminate; etching the second substrate product with the first mask and a second mask, formed on the photodiode mesa structure; to produce a waveguide mesa structure from the preliminary mesa structure, and the waveguide mesa structure having a height larger than that of the preliminary mesa structure.


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