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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10822276 B1

PDFFull Text
Date of Patent:
Nov. 03, 2020

Filed:

Feb. 28, 2017

Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Kenichi Watatani, Itami, JP;

Miki Miyanaga, Itami, JP;

Hideaki Awata, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Baker Botts L.L.P.

Michael A. Sartori

Primary Examiner:

Caleen O Sullivan

Int. Cl.
CPC ...
C04B 35/01 (2006.01); C04B 35/64 (2006.01); C04B 41/00 (2006.01); C04B 41/80 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); C23C 14/34 (2006.01); C23C 14/08 (2006.01); H01J 37/34 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
C04B 35/01 (2013.01); C04B 35/64 (2013.01); C04B 41/009 (2013.01); C04B 41/0072 (2013.01); C04B 41/80 (2013.01); C23C 14/086 (2013.01); C23C 14/34 (2013.01); C23C 14/3407 (2013.01); H01J 37/3426 (2013.01); H01L 21/02631 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); C04B 2235/40 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6583 (2013.01); H01L 21/02565 (2013.01);
Abstract

There are provided an oxide sintered material containing an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.

Find Patent Forward Citations

Watatani, Kenichi. (2020). Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device (U.S. Patent No. 10822276). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10822276

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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