The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Apr. 29, 2019
Applicant:

Genoptics Precision Biotechnologies Inc., New Taipei, TW;

Inventor:

Teng-Chien Yu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H04N 5/3745 (2011.01); G01N 21/552 (2014.01); G01N 21/64 (2006.01); G02B 5/22 (2006.01); G02B 5/28 (2006.01); H01L 31/112 (2006.01); H04B 10/116 (2013.01); H04L 7/00 (2006.01); H04N 5/353 (2011.01); H04N 5/369 (2011.01); H04N 5/378 (2011.01); H04N 9/04 (2006.01);
U.S. Cl.
CPC ...
H04N 5/37452 (2013.01); G01N 21/554 (2013.01); G01N 21/645 (2013.01); G02B 5/22 (2013.01); G02B 5/285 (2013.01); H01L 31/1126 (2013.01); H04B 10/116 (2013.01); H04L 7/0075 (2013.01); H04N 5/353 (2013.01); H04N 5/3696 (2013.01); H04N 5/378 (2013.01); H04N 9/045 (2013.01); G01N 2201/064 (2013.01);
Abstract

A sensing device including a semiconductor substrate, a filtering structure and a sensing structure is provided. The semiconductor substrate has a sample excitation region and an optical sensor region. The optical sensor region laterally encircles the sample excitation region. The filtering structure is embedded in the semiconductor substrate. The filtering structure is located in the sample excitation region and has a sample containing portion. The sample containing portion is adapted to contain a sample and receive an excitation beam. The sensing structure is embedded in the semiconductor substrate. At least a portion of the sensing structure is disposed in the optical sensor region and the sensing structure at least laterally encircles the filtering structure. After the excitation beam is transmitted to the sample containing portion along a direction perpendicular to a surface of the semiconductor substrate and excites the sample, the sample is adapted to emit a signal beam, and the sensing structure is adapted to sense the signal beam.


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