The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Nov. 18, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventor:
Jacob Christopher Sharpe, Cambridge, GB;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04L 27/34 (2006.01); H04L 27/20 (2006.01); H04L 27/36 (2006.01); H04L 7/033 (2006.01);
U.S. Cl.
CPC ...
H04L 27/3405 (2013.01); H04L 7/0331 (2013.01); H04L 27/206 (2013.01); H04L 27/345 (2013.01); H04L 27/364 (2013.01); H04L 2203/02 (2013.01);
Abstract
A polar transmitter and method thereof generate a filtered IQ waveform in IQ space representing an input bit stream. The filtered IQ waveform is modified to avoid a zero crossing region by intermittently adding thereto a zero crossing avoidance signal with a frequency spectrum comprising at least first and second tones defining first and second peaks on opposite sides of a center-frequency valley. A polar signal comprising a polar amplitude and phase is generated based on the modified IQ waveform. An RF carrier is modulated using the polar signal.