The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

May. 06, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Gaetano Maria Walter Petrina, Kirchdorf an der Amper, DE;

Joerg Kirchner, Mauern, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 3/158 (2006.01); H04M 1/02 (2006.01);
U.S. Cl.
CPC ...
H02M 3/1582 (2013.01); H02M 1/08 (2013.01); H03K 2217/0063 (2013.01); H04M 1/0202 (2013.01);
Abstract

A DC/DC switching converter includes high-side and low-side power NFETs coupled in series between a first pin for coupling to a first supply voltage and a second pin for coupling to a second supply voltage. A switch-node is coupled to a third pin. A first gate driver is coupled to drive a gate voltage on the high-side power NFET at a first rate and a second gate driver is coupled to drive the gate voltage of the high-side power NFET at a second rate that is higher than the first rate. A comparator is coupled to the first pin and to the gate of the high-side power NFET and further coupled to turn on the second gate driver when a gate voltage of the high-side power NFET is equal to the first supply voltage coupled to the first pin plus a threshold voltage of the high-side power NFET.


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