The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jan. 10, 2018
Applicant:

Microsemi Corporation, Aliso Viejo, CA (US);

Inventors:

Pierre Irissou, Sunnyvale, CA (US);

Etienne Colmet-Daage, Los Altos, CA (US);

Assignee:

Microsemi Corporation, Chandler, AZ (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 5/04 (2006.01); H02H 3/30 (2006.01); H02H 3/06 (2006.01); H02H 3/08 (2006.01); H02H 9/02 (2006.01);
U.S. Cl.
CPC ...
H02H 5/04 (2013.01); H02H 3/06 (2013.01); H02H 3/066 (2013.01); H02H 3/085 (2013.01); H02H 3/305 (2013.01); H02H 5/048 (2013.01); H02H 9/025 (2013.01); H04M 2201/80 (2013.01);
Abstract

An over-current protection apparatus constituted of: a transistor disposed on a substrate; a first thermal sense device arranged to sense a temperature reflective of a junction temperature of the transistor; a second thermal sense device arranged to sense a temperature reflective of a temperature of a casing surrounding the substrate; and a control circuitry, arranged to alternately: responsive to the sensed temperature by the first thermal sense device and the sensed temperature of the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is greater than a predetermined value, switch off the transistor; and responsive to the sensed temperature by the first thermal sense device and the sensed temperature by the second thermal sense device being indicative that the temperature difference between the transistor junction and the substrate casing is not greater than the predetermined value, switch on the transistor.


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