The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Aug. 23, 2017
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Tsutomu Yamaguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/12 (2006.01); H01S 5/30 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/12 (2013.01); H01S 5/3013 (2013.01); H01S 5/0421 (2013.01);
Abstract

A ridge structure () having a ridge lower part (), a ridge upper part () above the ridge lower part () and having a larger width than the ridge lower part (), is formed on a semiconductor substrate (). A recess () of the ridge structure (), where the ridge lower part () is laterally set back from the ridge upper part () due to a difference in width between the ridge upper part () and the ridge lower part t (), is completely filled with an insulating film () by an atomic layer deposition method to form a protrusion () from the semiconductor substrate (), the ridge structure (), and the insulating film () without any step in a side face of the protrusion ().


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