The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Mar. 10, 2019
Guangdong University of Technology, Guangzhou, CN;
Jianguo Ma, Guangzhou, CN;
Shaohua Zhou, Guangzhou, CN;
Guangdong University of Technology, Guangzhou, CN;
Abstract
The present disclosure discloses a dielectric resonant antenna based NMOSFET terahertz detector, comprising an on-chip dielectric resonant terahertz antenna, wherein the on-chip dielectric resonant terahertz antenna is connected to a matching network, the matching network is connected to a source of an NMOSFET, and a gate of the NMOSFET is sequentially connected to a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the gate, a drain of the NMOSFET is connected to a first DC blocking capacitor, the other end of the first DC blocking capacitor is connected to a low noise preamplifier, a second bias resistor and a second bias voltage are connected in parallel between the first DC blocking capacitor and the low noise preamplifier, and the low noise preamplifier is further provided with a voltage feedback loop. The present disclosure also discloses a design method for the same.