The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jun. 22, 2017
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Huafei Xie, Guangdong, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 51/50 (2006.01); H01L 27/32 (2006.01); G02F 1/1368 (2006.01); G02F 1/1335 (2006.01); H01L 27/28 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0566 (2013.01); G02F 1/1368 (2013.01); G02F 1/133514 (2013.01); H01L 27/322 (2013.01); H01L 27/3227 (2013.01); H01L 27/3274 (2013.01); H01L 51/001 (2013.01); H01L 51/003 (2013.01); H01L 51/0007 (2013.01); H01L 51/0018 (2013.01); H01L 51/0023 (2013.01); H01L 51/0028 (2013.01); H01L 51/0541 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5096 (2013.01); G02F 2202/36 (2013.01); H01L 27/283 (2013.01); H01L 51/0048 (2013.01); H01L 51/502 (2013.01); H01L 2251/301 (2013.01); H01L 2251/558 (2013.01);
Abstract

The present application provides a method for fabricating a thin film transistor, a method for fabricating an array substrate, and a display apparatus. A method for fabricating a thin film transistor including: providing a substrate; covering an isolating layer on the substrate; coating an active layer precursor solution on the isolation layer; forming an active layer thin film by the active layer precursor solution; dividing the active layer thin film into a small module active layer, the mobility of the active layer of the thin film transistor is increased, and to drive the quantum dot light emitting device of the array substrate through the thin film transistor with high mobility to improve the display luminescence performance of the display apparatus.


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