The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
May. 18, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Ecole Polytechnique, Palaiseau, FR;
Marie-Claude Clochard, Sartrouville, FR;
Melilli Giuseppe, Modica, IT;
Jean-Eric Wegrowe, Verrieres-le-Buisson, FR;
Travis Wade, Paris, FR;
Emmanuel Balanzat, Anisy, FR;
Eric Giglio, Caen, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
ECOLE POLYTECHNIQUE, Palaiseau, FR;
Abstract
The invention relates to a process for fabricating a piezoelectric nanogenerator, to a piezoelectric nanogenerator obtained by this process and to a device including such a piezoelectric nanogenerator connected to a capacitor, said process comprising the following steps: a) providing a membrane () made of polarised β-PVDF or polarised P(VDF-TrFe) copolymer and therefore having piezoelectric properties, said membrane () moreover having two external major faces () that are separated by a membrane thickness (e); b) irradiating the entirety of the thickness of said membrane (), via at least one of its two external major faces (), with heavy ions having a fluence of between 103 ions/cm2 and 1010 ions/cm2, as a result of which a membrane () containing latent traces (TL) of the passage of the heavy ions through the entirety of its thickness is obtained; c) revealing the latent traces (TL) using a chemical process of length that is preset so as to preserve a defect zone (ZD) belonging to the latent trace, as a result of which a nanostructured membrane is obtained having nanopores including, around each nanopore, a defect zone (ZD); d) depositing a layer of an electrical conductor on one () of the two external major faces () of said membrane; e) electrodepositing an electrical conductor or semiconductor in the nanopores, the electrodeposition being stopped before the nanopores have been completely filled, as a result of which a nanostructured membrane is obtained having nanowires () partially filling the nanopores; and f) depositing a layer, of an electrical conductor, on the other () of the two external major faces () and which therefore does not make contact with the nanowires.