The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Aug. 22, 2017
Applicant:
Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;
Inventor:
Tomoaki Sato, Yamaguchi, JP;
Assignee:
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 29/41 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01);
Abstract
A group III nitride semiconductor light-emitting element is provided which includes an active layer between an n-type layer and a p-type layer, an n-electrode on the n-type layer, and a p-electrode on the p-type layer, and having a mesa structure including the p-type layer, and is characterized in that: the p-electrode has, in a top view of the group III nitride semiconductor light-emitting element, a protruding portion in a mesa end direction and an n-electrode non-formation region in the vicinity of the mesa end of a projecting end portion of the protruding portion.