The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Nov. 09, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Franz-Peter Kalz, Regensburg, DE;

Jochen Dangelmaier, Beratzhausen, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/18 (2006.01); B81B 7/02 (2006.01); B81C 1/00 (2006.01); B81B 7/00 (2006.01); H01L 31/0203 (2014.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0216 (2013.01); B81B 7/0025 (2013.01); B81B 7/02 (2013.01); B81C 1/00047 (2013.01); H01L 31/0203 (2013.01); H01L 31/02327 (2013.01); H01L 31/18 (2013.01); B81B 2201/02 (2013.01); B81B 2201/0214 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/012 (2013.01); B81B 2207/096 (2013.01); B81C 2201/0143 (2013.01); B81C 2203/0109 (2013.01);
Abstract

A semiconductor sensor device includes a substrate including a first main face and a second main face opposite the first main face, a semiconductor element including a sensing region, the semiconductor element on the first main face of the substrate and being electrically coupled to the substrate, a lid on the first main face of the substrate and forming a cavity, wherein the semiconductor element is in the cavity, and a vapor deposited dielectric coating covering the semiconductor element and the first main face of the substrate, the vapor deposited dielectric coating having an opening over the sensing region, wherein the second main face of the substrate is at least partially free of the vapor deposited dielectric layer.


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