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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10818788 B1

PDFFull Text
Date of Patent:
Oct. 27, 2020

Filed:

Dec. 15, 2017

Schottky diode integrated into superjunction power mosfets

Applicant:

Alpha and Omega Semiconductor (Cayman) Ltd., Grand Cayman, KY;

Inventors:

Yi Su, Cupertino, CA (US);

Madhur Bobde, Sunnyvale, CA (US);

Assignee:

ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD., Grand Cayman, KY;

Attorneys:

JDI Patent

Joshua Isenberg

Robert Pullman

Primary Examiner:

Benjamin Tzu-Hung Liu

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 21/266 (2013.01); H01L 21/28035 (2013.01); H01L 21/30604 (2013.01); H01L 21/3212 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/45 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01);
Abstract

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure. Each of the integrated Schottky diodes includes a Schottky contact between a lightly doped semiconductor layer and a metallic layer.

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Quick Actions:

Su, Yi. (2020). Schottky diode integrated into superjunction power mosfets (U.S. Patent No. 10818788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10818788

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