The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jan. 24, 2019
Renesas Electronics Corporation, Tokyo, JP;
Hitoshi Matsuura, Hitachinaka, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a trench-gate IGBT enabling the fine adjustment of a gate capacitance independent from cell performance. In a gate wiring lead-out region, a plurality of trenches is arranged spaced apart from each other in an X direction perpendicular to a Y direction. Each trench has a shape enclosed by a rectangular outer outline and a rectangular inner outline in plan view. A trench gate electrode is provided in each of the trenches so as to be electrically coupled to an extraction electrode. To obtain an adequate breakdown voltage between a collector and an emitter, the trenches are formed in a p-type floating region. An n-type drift region is formed in a region located inside an inner outline of the trench in plan view, whereby a capacitance formed between the trench gate electrode and the n-type drift region is used as the reverse transfer capacitance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile