The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Mar. 23, 2018
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Masahiko Suzuki, Sakai, JP;
Hideki Kitagawa, Sakai, JP;
Tetsuo Kikuchi, Sakai, JP;
Toshikatsu Itoh, Sakai, JP;
Setsuji Nishimiya, Sakai, JP;
Teruyuki Ueda, Sakai, JP;
Kengo Hara, Sakai, JP;
Hajime Imai, Sakai, JP;
Tohru Daitoh, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
An active matrix substrate according to an embodiment of the present invention includes a plurality of thin film transistors supported on a substrate and an inorganic insulating layer covering the plurality of thin film transistors. Each thin film transistor includes a gate electrode, an oxide semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode. At least one of the gate insulating layer and the inorganic insulating layer is an insulating layer stack having a multilayer structure including a silicon oxide layer and a silicon nitride layer. The insulating layer stack further includes an intermediate layer disposed between the silicon oxide layer and the silicon nitride layer, the intermediate layer having a refractive index nhigher than a refractive index nof the silicon oxide layer and lower than a refractive index nof the silicon nitride layer.