The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Sep. 17, 2019
Boe Technology Group Co., Ltd., Beijing, CN;
Shipei Li, Beijing, CN;
Wusheng Li, Beijing, CN;
Qi Yao, Beijing, CN;
Dongsheng Li, Beijing, CN;
Fang He, Beijing, CN;
Huili Wu, Beijing, CN;
Renquan Gu, Beijing, CN;
Sheng Xu, Beijing, CN;
Wei He, Beijing, CN;
Dongsheng Yin, Beijing, CN;
Ying Zhao, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A photosensitive sensor and a method of manufacturing the photosensitive sensor are disclosed. The photosensitive sensor includes a thin film transistor and a photosensitive element on a substrate, wherein the photosensitive element includes a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode. The second electrode is connected to a drain electrode of the thin film transistor. An orthographic projection of an active layer of the thin film transistor on the substrate is within an orthographic projection of the second electrode on the substrate. The second electrode includes at least two stacked conductive layers, at least one of the at least two stacked conductive layers being a light shielding metal layer.