The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jun. 20, 2018
Canon Kabushiki Kaisha, Tokyo, JP;
Junji Iwata, Tokyo, JP;
Yoichi Wada, Yokohama, JP;
Yoichiro Handa, Tokyo, JP;
Daichi Seto, Yokohama, JP;
Hideyuki Ito, Kawasaki, JP;
Ginjiro Toyoguchi, Tokyo, JP;
Hajime Ikeda, Yokohama, JP;
Masahiro Kobayashi, Tokyo, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.