The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Dec. 26, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kyunghwan Lee, Hwaseong-si, KR;
Changseok Kang, Seongnam-si, KR;
Yongseok Kim, Suwon-si, KR;
Junhee Lim, Seoul, KR;
Kohji Kanamori, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
Provided are three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor memory device includes a plurality of electrode structures provided on a substrate and extending in parallel to each other in one direction and each including electrodes and insulating layers alternately stacked on the substrate, a plurality of vertical structures penetrating the plurality of electrode structures, and an electrode separation structure disposed between two of the plurality of electrode structures adjacent to each other. Each of the electrodes includes an outer portion adjacent to the electrode separation structure, and an inner portion adjacent to the plurality of vertical structures. A thickness of the outer portion is smaller than a thickness of the inner portion.