The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Sep. 06, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Atsushi Murakoshi, Yokkaichi Mie, JP;

Hiroki Sasaki, Nagoya Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 27/11556 (2017.01); H01L 27/11578 (2017.01); H01L 27/11514 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11514 (2013.01); H01L 27/11556 (2013.01); H01L 27/11578 (2013.01); H01L 29/517 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 2924/1438 (2013.01);
Abstract

A storage device includes: a plurality of electrode films stacked in a first direction, and extending in a second direction intersecting the first direction; a first semiconductor film provided adjacent to the plurality of electrode films, and extending in the first direction; a first charge holding film provided between one electrode film among the plurality of electrode films, and the semiconductor film, and including any one of a metal, a metal compound, and a high dielectric material; and a second semiconductor film located between the first semiconductor film and the charge holding film, and extending in the first direction along the first semiconductor film. The second semiconductor film is electrically insulated from the plurality of electrode films, the first charge holding film, and the first semiconductor film.


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