The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Aug. 10, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
There is provided a semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer using a hybrid interlayer insulating film. The semiconductor device includes a gate electrode on a substrate, a gate spacer being on a sidewall of the gate electrode and including an upper portion and a lower portion, a lower interlayer insulating film being on the substrate and overlapping with the lower portion of the gate spacer, and an upper interlayer insulating film being on the lower interlayer insulating film and overlapping with the upper portion of the gate spacer, wherein the lower interlayer insulating film is not interposed between the upper interlayer insulating film and the upper portion of the gate spacer.