The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jun. 11, 2019
Applicant:

Alpha Power Solutions Limited, Hong Kong, CN;

Inventors:

Wai Tien Chan, Hong Kong, CN;

Wing Chong Tony Chau, Hong Kong, CN;

Wing Kit Cheung, Hong Kong, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/266 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/266 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 29/78 (2013.01);
Abstract

An exemplary method of making a semiconductor device includes providing a semiconductor layer of a first conductivity type, providing a first hard mask on a surface of the semiconductor layer, patterning the first hard mask to obtain a patterned first hard mask to obtain an exposed surface of the semiconductor layer, forming a body region in the semiconductor layer by using the patterned first hard mask as mask, the body region being of a second conductivity type different from the first conductivity type, providing a second hard mask on the patterned first hard mask and the exposed surface of the semiconductor layer, patterning the second hard mask to obtain a patterned second hard mask, and forming a contact region and a sinker region by using the patterned first hard mask and the patterned second hard mask as mask.


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