The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Aug. 28, 2018
V Technology Co., Ltd., Yokohama-shi, JP;
Michinobu Mizumura, Yokohama, JP;
V TECHNOLOGY CO., LTD., Yokohama-shi, JP;
Abstract
The present invention provides a method for manufacturing a thin film transistor including processing of irradiating an amorphous silicon filmdeposited on a substrate with laser light. The method comprises: a laser annealing step for forming a polysilicon filmincluding a channel regionby irradiating an area including a formation region of the regionin the filmwith the laser light such that the area including the formation region is heated, melted, and recrystallized; and a removing step for etching off an area outside the regionfrom the polysilicon film. Thus, the present invention can provide a method for manufacturing a thin film transistor and a mask for use in the manufacturing method that are capable of promoting the recrystallization of the filmand thereby improving its electron mobility even when laser irradiation has to be performed under restricted irradiation conditions.