The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
May. 28, 2019
Imec Vzw, Leuven, BE;
Ming Zhao, Bertem, BE;
Weiming Guo, Heverlee, BE;
IMEC vzw, Leuven, BE;
Abstract
According to an aspect of the present disclosure, there is provided a III-N semiconductor structure comprising: a semiconductor-on-insulator substrate; a buffer structure comprising a superlattice including at least a first superlattice block and a second superlattice block formed on the first superlattice block, the first superlattice block including a repetitive sequence of first superlattice units, each first superlattice unit including a stack of layers of AlGaN, wherein adjacent layers of the stack have different aluminum content, the second superlattice block including a repetitive sequence of second superlattice units, each second superlattice unit including a stack of layers of AlGaN, wherein adjacent layers of the stack have different aluminum content, wherein an average aluminum content of the second superlattice block is greater than an average aluminum content of the first superlattice block; and a III-N semiconductor channel layer arranged on the buffer structure.