The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jan. 31, 2019
Applicant:
United Semiconductor Japan Co., Ltd, Kuwana-Shi, Mie, JP;
Inventors:
Satoshi Torii, Kuwana, JP;
Shu Ishihara, Kuwana, JP;
Assignee:
UNITED SEMICONDUCTOR JAPAN CO., LTD., Kuwana-shi, Mie, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11529 (2017.01); H01L 27/11524 (2017.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0433 (2013.01); G11C 16/26 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01);
Abstract
A nonvolatile semiconductor memory device includes a selection transistor and a memory transistor that are formed on a well for each of a plurality of memory cells. At a time of a data read from the memory transistor, a first voltage is applied to the well and a source of the memory transistor, and a second voltage is applied to a gate of the selection transistor included in a non-selected memory cell among the plurality of memory cells. The first voltage is smaller than an absolute value of the second voltage.