The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Feb. 22, 2019
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;
Institut Polytechnique DE Grenoble, Grenoble, FR;
Nicolas Perrissin-Fabert, Grenoble, FR;
Bernard Dieny, Grenoble, FR;
Lucian Prejbeanu, Grenoble, FR;
Ricardo Sousa, Grenoble, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris, FR;
INSTITUT POLYTECHNIQUE DE GRENOBLE, Grenoble, FR;
Abstract
A magnetic tunnel junction with out-of-plane magnetisation includes a storage layer; a reference layer; and a tunnel barrier layer. The two magnetisation states of the storage layer are separated by an energy barrier including a contribution due to the shape anisotropy of the storage layer and a contribution of interfacial origin for each interface of the storage layer. The storage layer has a thickness comprised between 0.8 and 8 times a characteristic dimension of a planar section of the tunnel junction. The contribution to the energy barrier due to the shape anisotropy of the storage layer is at least two times greater and preferably at least 4 times greater than the contributions to the energy barrier of interfacial origin.