The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
May. 23, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Jae-Hoon Kim, Seoul, KR;
Yong-Durk Kim, Hwaseong-si, KR;
Woo-Tae Kim, Seoul, KR;
Hyung-Ock Kim, Seoul, KR;
Joon-Young Shin, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of generating an integrated circuit design includes receiving input data defining input cells of the integrated circuit design, selecting first standard cells from a first standard cell library to represent the input cells having a first characteristic, selecting second standard cells from a second standard cell library to represent the input cells having a second characteristic different from the first characteristic, and generating output data representing the integrated circuit design by performing placement and routing on the selected first standard cells and the selected second standard cells. The first standard cell library includes a first type of standard cells manufactured using a first diffusion break scheme. The second standard cell library includes a second type of standard cells manufactured using a second diffusion break scheme. Each of the second type of standard cells has a same function as a respective one of the first type of standard cells.