The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jan. 26, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hyun Chui Lim, Seoul, KR;

Jae Woong Han, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21K 9/20 (2016.01); H01L 33/12 (2010.01); H01L 33/36 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); F21V 29/70 (2015.01); F21Y 115/10 (2016.01);
U.S. Cl.
CPC ...
F21K 9/20 (2016.08); F21V 29/70 (2015.01); H01L 33/00 (2013.01); H01L 33/12 (2013.01); H01L 33/14 (2013.01); H01L 33/22 (2013.01); H01L 33/325 (2013.01); H01L 33/36 (2013.01); F21Y 2115/10 (2016.08);
Abstract

An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (); a second conductive type AlGaN-based semiconductor layer () on the second electrode layer (); an active layer () on the second conductive type AlGaN-based semiconductor layer (); a current spreading layer () including a first conductive type AlGaN layer (0<x≤≤0.25) () and disposed on the active layer (); and a first conductive type AlGaN-based semiconductor layer () disposed on the current spreading layer (). A composition x of Al in the first conductive type AlGaN layer (0<x≤≤0.25) () may be reduced in a direction of the active layer () from the first conductive type first AlGaN-based semiconductor layer ().


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