The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Nov. 21, 2018
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Jaehyun Park, Seoul, KR;

Yumin Sim, Seoul, KR;

Jaikyeong Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 16/02 (2006.01); G02F 1/01 (2006.01); G02F 1/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0272 (2013.01); C23C 16/0227 (2013.01); C23C 16/26 (2013.01); G02F 1/0018 (2013.01); G02F 1/011 (2013.01);
Abstract

A method for synthesizing a graphene pattern includes physically adhering a catalyst block including a catalyst material, which is a gamma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate; forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containing oxygen, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused along the flat interface and the growth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface.


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