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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10815425 B1

PDFFull Text
Date of Patent:
Oct. 27, 2020

Filed:

Sep. 14, 2018

Quantum dot, manufacturing method of the dot, and compact, sheet member, wavelength conversion member and light emitting apparatus using the quantum dot

Applicant:

Ns Materials Inc., Fukuoka, JP;

Inventors:

Akiharu Miyanaga, Fukuoka, JP;

Eiichi Kanaumi, Fukuoka, JP;

Yoshikazu Nageno, Fukuoka, JP;

Assignee:

NS MATERIALS INC., Fukuoka, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
B22F 9/24 (2006.01); B22F 9/16 (2006.01); C09K 11/88 (2006.01); B01J 13/04 (2006.01); H01L 33/54 (2010.01); B01D 21/26 (2006.01); B82Y 30/00 (2011.01); B01J 13/02 (2006.01); B01J 13/22 (2006.01); C09B 67/02 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/883 (2013.01); B01D 21/262 (2013.01); B01J 13/02 (2013.01); B01J 13/04 (2013.01); B01J 13/22 (2013.01); B82Y 30/00 (2013.01); C09B 67/0097 (2013.01); H01L 33/502 (2013.01); H01L 33/507 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01L 2224/48091 (2013.01); Y10S 977/774 (2013.01); Y10S 977/892 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01);
Abstract

A quantum dot has a property that, when subjected to a GC-MS qualitative analysis at 350° C., octadecene (ODE) is present while oleylamine (OLA) is absent. A light emitting apparatus has a fluorescent layer covering and disposed immediately above a light emitting side of a light emitting device. The fluorescent layer, which is disposed immediately above the light emitting device, is formed of a resin with quantum dots dispersed therein. Deteriorations of light emission intensities at respective RGB peak wavelengths of the light emitting device after light emission for 1000 hours at 85° C. are all within 30% of a light emission intensity of the light emitting device before the light emission. Black discoloration caused by the deteriorations of the light emission intensities at the respective RGB peak wavelengths of the light emitting device does not occur in the resin.

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