The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Dec. 20, 2018
Applicant:

Panasonic Corporation, Osaka, JP;

Inventor:

Arinobu Kanegae, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 51/00 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5253 (2013.01); H01L 27/3262 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01); H01L 51/0097 (2013.01); Y02E 10/549 (2013.01);
Abstract

The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions.


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