logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10811608 B1

PDFFull Text
Date of Patent:
Oct. 20, 2020

Filed:

Nov. 09, 2016

N-doped semiconducting material comprising two metal dopants

Applicant:

Novaled Gmbh, Dresden, DE;

Inventors:

Tomas Kalisz, Dresden, DE;

Francois Cardinali, Dresden, DE;

Jerome Ganier, Dresden, DE;

Uwe Gölfert, Tharandt, DE;

Vygintas Jankus, Dresden, DE;

Carsten Rothe, Dresden, DE;

Benjamin Schulze, Dresden, DE;

Steffen Willmann, Dresden, DE;

Assignee:

Novaled GmbH, Dresden, DE;

Attorney:

Eversheds Sutherland (US) LLP

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/50 (2006.01); C23C 14/06 (2006.01); H01L 51/56 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/002 (2013.01); C23C 14/06 (2013.01); H01L 51/001 (2013.01); H01L 51/006 (2013.01); H01L 51/0061 (2013.01); H01L 51/5076 (2013.01); H01L 51/5092 (2013.01); H01L 51/56 (2013.01); H01L 51/0072 (2013.01); H01L 51/0073 (2013.01); H01L 51/42 (2013.01); H01L 2251/556 (2013.01); H01L 2251/558 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

Find Patent Forward Citations

Kalisz, Tomas. (2020). N-doped semiconducting material comprising two metal dopants (U.S. Patent No. 10811608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10811608

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…