The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

May. 16, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Lawrence A. Clevenger, LaGrangeville, NY (US);

Liying Jiang, Albany, NY (US);

Sebastian Naczas, Albany, NY (US);

Michael Rizzolo, Albany, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01);
Abstract

A method of forming magnetic device structures and electrical contacts, including removing a portion of a second interlayer dielectric (ILD) layer to expose an underlying portion of a cap layer in a first device region, wherein the cap layer is on a first ILD layer, while leaving an ILD block in a second device region, forming a spacer layer on the exposed portion of the cap layer in the first device region, forming an electrical contact layer on the spacer layer in the first device region, forming a magnetic device layer on the electrical contact layer and ILD block, removing portions of the magnetic device layer to form a magnetic device stack on the ILD block, and removing portions of the electrical contact layer to form electrical contact pillars, wherein the portions of the electrical contact layer and portions of the magnetic device layer are removed at the same time.


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